FDPF390N15A symbol parameter FDPF390N15A unit thermal resistance, junction to case, max. 5.7 thermal resistance, junction to ambient, max. 62.5 march 2013 FDPF390N15A n-cha nnel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c,silicon limited) 15 a -continuous (t c = 100 o c,silicon limited) 10 i dm drain current - pulsed (note 1) 60 a e as single pulsed avalanche energy (note 2) 78 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 22 w - derate above 25 o c0.18w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter unit r jc o c/w r ja FDPF390N15A n-channel powertrench ? mosfet 150 v, 15 a, 40 m features ?r ds(on) = 31 m ( typ.)@ v gs = 10 v, i d = 15 a ? fast switching speed ? low gate charge, q g = 14.3 nc(typ.) ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor ? ?s advance powertrench ? process that has been tailored to minimize the on-state resistance while maintain- ing superior switching performance. applications ? consumer appliances ?led tv ? synchronous rectification ? uninterruptible power supply ? motor solar inverter g s d to-220f g s d
15a, di/dt FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDPF390N15A FDPF390N15A to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 125 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 15a - 31 40 m g fs forward transconductance v ds = 10v, i d = 15a -32-s c iss input capacitance v ds = 75v, v gs = 0v f = 1mhz - 965 1285 pf c oss output capacitance - 96 130 pf c rss reverse transfer capacitance - 5.8 - pf c oss(er) energy related output capacitance v ds = 75v,v gs = 0v 169 - pf q g(tot) total gate charge at 10v v ds = 75v,i d = 27a v gs = 10v (note 4) - 14.3 18.6 nc q gs gate to source gate charge 5.0 - nc q gs2 gate charge threshold to plateau - 2.0 - nc q gd gate to drain ?miller? charge - 3.5 - nc esr equivalent series resistance (g-s) f = 1mhz - 1.4 - t d(on) turn-on delay time v dd = 75v, i d = 27a v gs = 10v, r gen = 4.7 (note 4) -1438ns t r turn-on rise time - 10 30 ns t d(off) turn-off delay time - 20 50 ns t f turn-off fall time - 5 20 ns i s maximum continuous drain to source diode forward current - - 15 a i sm maximum pulsed drain to source diode forward current - - 64 a v sd drain to source diode forward voltage v gs = 0v, i sd = 15a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 27a di f /dt = 100a/ s -63-ns q rr reverse recovery charge - 131 - nc notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. starting t j = 25 c, l = 3 mh, i sd = 7.2 a 3. i sd 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 5 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 2 3 4 5 6 7 8 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 20 40 60 80 100 20 40 60 80 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1.3 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 200 1 10 100 1000 2000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12 16 0 2 4 6 8 10 *note: i d = 27a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source volatage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 0.92 0.96 1.00 1.04 1.08 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 0.4 0.8 1.2 1.6 2.0 2.4 2.6 *notes: 1. v gs = 10v 2. i d = 15a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 4 8 12 16 r jc =5.7 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c ] 1 10 100 200 0.001 0.01 0.1 1 10 100 300 100ms 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 30 60 90 120 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 20 1 10 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current (a) t av , time in avalanche (ms) 12
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 0.01 0.1 1 8 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 5.7 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 7 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDPF390N15A n-cha nnel powertrench ? mosfet www.fairchildsemi.com 8 ?2011 fairchild semiconductor corporation FDPF390N15A rev. c0 mechanical dimensions dimensions in millimeters to-220m03
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?2011 fairchild semiconductor corporation FDPF390N15A rev. c0
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